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  • "
    tellurium  Te
    Available form
    Lump/ingot/powder
    Application field
    Application Field
    [99.999% Tellurium]
     
    1. Technical connection: anode slime of lead-zinc mine and copper mine -- enrichment -- electrolysis -- vacuum distillation -- hydrodeoxygenation -- regional smelting;
     
    2. Physical properties:
     
    Atomic weight: 127.60
     
    Electronegativity: 2.1
     
    Density: 6.24 g/cm3
     
    Melting point: 449.51 ℃
     
    Boiling point: 998 ℃
     
    Physical properties: block, ingot, powder.
     
    4. Purpose:
     
    Is mainly used for the preparation of Ⅱ - Ⅵ compound semiconductor, solar cell, thermoelectric conversion element, refrigeration components, gas sensitivity, thermal, pressure-sensitive and light-sensitive, piezoelectric crystal and nuclear radiation detection, infrared detectors and other basic materials.
    Product description
    Describe
    [99.999% Tellurium]
    1. Technical connection: anode slime of lead-zinc mine and copper mine -- enrichment -- electrolysis -- vacuum distillation -- hydrodeoxygenation -- regional smelting;
    2. Test: icp-ms,GDMS, laser particle size analyzer, scanning electron microscope.
    3. Service: provide practical protective measures and material application solutions.
    4. Physical properties:
    Atomic weight: 127.60
    Electronegativity: 2.1
    Density: 6.24 g/cm3
    Melting point: 449.51 ℃
    Boiling point: 998 ℃
    5. Specifications:
    Chemical purity:
    High purity tellurium: Te-05 purity 99.999% above, silver, aluminum, bismuth, calcium, chromium, copper, iron, magnesium, manganese, sodium, nickel, lead, selenium, silicon, tin, zinc, impurity total content less than 10ppm;
    Ultra pure tellurium: Te-06 purity 99.9999% above, silver, aluminum, bismuth, calcium, chromium, copper, iron, magnesium, manganese, sodium, nickel, lead, selenium, silicon, tin, zinc, impurity total content less than 1ppm;
    Ultra high purity tellurium: Te 07 purity 99.99999% above, silver, aluminum, bismuth, calcium, chromium, copper, iron, magnesium, manganese, sodium, nickel, lead, selenium, silicon, tin, zinc, impurity total content less than 0.1 PPM.
    6. Physical properties: block, ingot, powder.
    7. Purpose:
    Is mainly used for the preparation of Ⅱ - Ⅵ compound semiconductor, solar cell, thermoelectric conversion element, refrigeration components, gas sensitivity, thermal, pressure-sensitive and light-sensitive, piezoelectric crystal and nuclear radiation detection, infrared detectors and other basic materials.
    8. Packaging: plastic film vacuum packaging after polyester film packaging or polyethylene bottle vacuum packaging.
    Other materials
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